af9435p p-channel enhan cement mode power mosfet this datasheet contains new product information. anachip corp. re serves the rights to modify the product specification without notice. no liability is assumed as a result of the use of this product. no rights under any patent accompany the sale of the product. rev. 1.2 aug 23, 2005 1/5 ? features - simple drive requirement - low gate charge - fast switching speed ? product summary bv dss (v) r ds(on) (m ? ) i d (a) -30 50 -5.3 ? pin assignments so-8 5 6 7 8 4 3 2 1 d d d d s s s g ? general description the advanced power mosfet provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. ? pin descriptions pin name description s source g gate d drain ? ordering information a x 9435p x x x pn package feature f :mosfet s: so-8 lead free blank : normal l : lead free package packing blank : tube or bulk a : tape & reel
af9435p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.2 au g 23, 2005 2/5 ? absolute maxi mum ratings symbol parameter rating units v ds drain-source voltage -30 v v gs gate-source voltage 20 v t a =25oc -5.3 i d continuous drain current (note 1) t a =70oc -4.7 a i dm pulsed drain current (note 2) -20 a total power dissipation 2.5 w p d linear derating factor t a =25oc 0.02 w/oc t stg storage temperature range -55 to 150 oc t j operating junction temperature range -55 to 150 oc ? thermal resistance ratings symbol parameter maximum units rthj-amb thermal resistance junction-ambient (note 1) max. 50 oc/w ? electrical characteristics at t j =25oc unless otherwise specified symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 o c, i d =-1ma - -0.04 - v/ o c v gs =-10v, i d =-5.3a - - 50 r ds(on) static drain-source on-resistance (note 3) v gs =-4.5v, i d =-4.2a - - 90 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5.3a - 10 - s drain-source leakage current (t j =25 o c) v ds =-30v, v gs =0v - - -1 i dss drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge (note 3) - 9 15 q gs gate-source charge - 3 - q gd gate-drain (?miller?) charge i d =-5.3a, v ds =-24v, v gs =-4.5v - 5 - nc t d(on) turn-on delay time (note 3) - 11 - t r rise time - 8 - t d(off) turn-off delay time - 25 - t f fall-time v ds =-15v, i d =-1a, r g =6 ? , v gs =-10v r d =15 ? - 17 - ns c iss input capacitance - 507 810 c oss output capacitance - 222 - c rss reverse transfer capacitance v gs =0v, v ds =-15v, f=1.0mhz - 158 - pf ? source-drain diode symbol parameter test conditions min. typ. max. unit v sd forward on voltage (note 3) i s =-2.6a, v gs =0v - - -1.2 v t rr reverse recovery time (note 3) - 29 - ns q rr reverse recovery charge i s =-5.3a, v gs =0v, dl/dt=100a/s - 20 - nc note 1: surface mounted on 1 in 2 copper pad of fr4 board; 125 o c/w when mounted on min. copper pad. note 2: pulse width limited by max. junction temperature. note 3: pulse width 300us, duty cycle 2%.
af9435p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.2 au g 23, 2005 3/5 ? typical performance characteristics
af9435p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.2 au g 23, 2005 4/5 ? typical performance charact eristics (c ontinued)
af9435p p-channel enhan cement mode power mosfet anachip corp. www.anachip.com.tw rev. 1.2 au g 23, 2005 5/5 ? marking information so-8 ( top view ) 1 8 9 4 3 5 p aa y w x year code: part number lot code: week code: factory code "a~z": 01~26; "a ~z ": 27~52 "4" =2004 ~ "a~z": 01~26; "a ~z ": 27~52 "x": non-lead free; "x": lead free logo ? package information package type: so-8 l c detail a e e1 a a1 d 8 765 1 234 e b detail a 1. all dimensions are in millimeters. 2. dimension does not include mold protrusions. dimensions in millimeters symbol min. nom. max. a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 l 0.38 0.71 1.27 0 o 4 o 8 o e 1.27 typ.
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